In foreign countries, first-class companies such as Osram, Preh of the United States, and Sanken of Japan have made breakthroughs in the research of large-size silicon substrate GaN-based LEDs, and international LED giants such as Philips, South Korea’s Samsung, LG, and Japan’s Toshiba have also set off a share. The research boom of GaN-based LEDs on silicon substrates. Among them, in 2011, Preh developed a high-efficiency gallium nitride-based LED on an 8-inch silicon substrate, and achieved a luminous efficiency of 160lm/W comparable to the performance of the top-level LED devices on sapphire and silicon carbide substrates. ; In 2012, Osram successfully produced 6-inch GaN-based LEDs on silicon substrates.

       On the other hand, in mainland China, the breakthrough point of LED chip enterprise technology is mainly to increase production capacity and large-size sapphire crystal growth technology. In addition to the successful mass production of 2-inch gallium nitride-based high-power LED chips on a 2-inch silicon substrate in 2011 by Jingneng Optoelectronics, Chinese chip companies have made no major breakthroughs in the research of GaN-based LEDs on silicon substrates. At present, LED chip companies in mainland China are still focusing on production capacity, sapphire substrate materials and wafer growth technology. Sanan Optoelectronics, Dehao Runda, and Tongfang Co., Ltd. Most of the mainland chip giants have also made breakthroughs in production capacity.